AlGaAs Datasheet | Specifications & PDF Download

AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-526A4U is infrared emitting diodes in GaAs technology with AlGaAs window coati

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Laser diodes AlGaAs laser diodes RLD-78NP10-B The RLD-78NP10-B is one of the world’s first mass-produced laser diodes that is manufactured by molecul

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www.DataSheet4U.com AlGaAs Beam Lead PIN Diode V 1.00 MA4AGBLP912 Features n n n n n n n Outline ( Topview ) Ultra Low Capacitance < 22 fF Excel

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H T-13/4 (5 mm), T-1 (3 mm), High Performance, Tinted, Diffused, AlInGaP, and TS AlGaAs Red LED Lamps Technical Data Features • High Light Output Ove

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Laser diodes AlGaAs laser diodes RLD-78PP-B / RLD-78NP-D The RLD-78PP-B and RLD-78NP-D are the world’s first mass-produced laser diodes those are man

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www.DataSheet4U.com AlGaAs SPST Non-Reflective PIN Diode Switch FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MH

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SPDT AlGaAs PIN Diode Switch Features • Ultra Broad Bandwidth: 50 MHz to 50 GHz • Functional Bandwidth: 50 MHz to 70 GHz • Insertion Loss: 0.7 dB • Is

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H T-13/4 (5 mm), T-1 (3 mm), High Performance, Tinted, Diffused, AlInGaP, and TS AlGaAs Red LED Lamps Technical Data Features • High Light Output Ove

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H T-13/4 (5 mm), T-1 (3 mm), High Performance, Tinted, Diffused, AlInGaP, and TS AlGaAs Red LED Lamps Technical Data Features • High Light Output Ove

Rating: 1 ★ (3 votes)

AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-526A2U is infrared emitting diodes in GaAs technology with AlGaAs window coati

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F5D1/2/3 AlGaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) DESCRIPTION • The F5D series is a 880 nm LED in a narrow angle,

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F5E1/2/3 AlGaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) DESCRIPTION The F5E series are 880nm LEDs in a wide angle, TO-46

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F5E1/2/3 AlGaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) DESCRIPTION The F5E series are 880nm LEDs in a wide angle, TO-46

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ISOCOM COMPONENTS ICPLW60L DESCRIPTION The ICPLW60L consists of a high efficient AlGaAs light emitting diode and a high speed optical detector. This

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Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surfa

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Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surf

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SLD231VL Index-Guided High Power AlGaAs Laser Diode For the availability of this product, please contact the sales office. Description The SLD231VL is

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SLD235VL Index-Guided High Power AlGaAs Laser Diode Preliminary For the availability of this product, please contact the sales office. Description The

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SLD238VL Index-Guided High Power AlGaAs Laser Diode For the availability of this product, please contact the sales office. Description The SLD238VL is

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Laser diodes AlGaAs laser diodes RLD-78MA The RLD-78MA is world’s first mass-produced laser diodes that is manufactured by molecular beam epitaxy. Th

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