AlGaAs Datasheet | Specifications & PDF Download

AlGaAs SP2T PIN Diode Switch V 1.00 MA4AGSW2 Features Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 0.7 dB Insert

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Datasheet -- SEP8736-002 Representative photograph, actual product appearance may vary. Due to regional agency approval requirements, some products m

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H T-13/4 (5 mm), T-1 (3 mm), High Performance, Tinted, Diffused, AlInGaP, and TS AlGaAs Red LED Lamps Technical Data Features • High Light Output Ove

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AlGaAs/GaAs High POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE MIE-144A4 Description The MIE-144A4 is a GaAs infrared emitting diode with AlGaAs win

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AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE Description The MIE-384A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip

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AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-524A4 is an infrared emitting diode utilizing GaAs with AlGaAs wind

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www.DataSheet4U.com AlGaAs SPST Non-Reflective PIN Diode Switch FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MH

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ISOCOM MICRON SEMICONDUCTOR CO., LTD PS2801x-4 Series Description The PS2801x-4 series combine an AlGaAs infrared emitting diode as the emitter whic

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MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT Features: • 24 dBm of Power at 18 GHz • 14 dB Small Signal Gain at 18 GHz • 45% typical PAE at 18 GH

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H T-13/4 (5 mm), T-1 (3 mm), High Performance, Tinted, Diffused, AlInGaP, and TS AlGaAs Red LED Lamps Technical Data Features • High Light Output Ove

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AlGaAs / InGaAs HEMT CFY 77 ________________________________________________________________________________________________________ Datasheet Feat

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AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-536A2U is infrared emitting diodes in GaAs technology with AlGaAs window coati

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SLD235VL Index-Guided High Power AlGaAs Laser Diode Preliminary For the availability of this product, please contact the sales office. Description The

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Laser diodes AlGaAs laser diodes RLD-78MA The RLD-78MA is world’s first mass-produced laser diodes that is manufactured by molecular beam epitaxy. Th

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ISOCOM COMPONENTS ICPLM611 DESCRIPTION The ICPLM611 consists of a high efficient AlGaAs light emitting diode and a high speed optical detector. This

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AlGaAs Flip-Chip PIN Diode 100MHz to 50GHz Features • • • • • • • MA4AGFCP910 Rev 2.0 Top View Shown Is With Diode Junction Up Cathode Lower Series

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TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Tr

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LS-0730 Series FEATURES  730nm Peak Wavelength  Long Life  RoHS Compliant  High Reliability DESCRIPTION The LS-0730 Series are AlGaAs LEDs with

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MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes Features  Low Series Resistance  Ultra Low Capacitance  Millimeter Wave Switching & Cutoff Freque

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SPDT AlGaAs PIN Diode Switch Features • Ultra Broad Bandwidth: 50 MHz to 50 GHz • Functional Bandwidth: 50 MHz to 70 GHz • Insertion Loss: 0.7 dB • Is

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