SHF-0186 Datasheet - ETC

SHF-0186 DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET

Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compre.

SHF-0186 Features

* Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) S21 Gmax

* +28 dBm P1dB Typical

* +40 dBm Output IP3 Typical

* High Drain Efficiency: Up to 46% at Class AB

* 17 dB Gain at 9

SHF-0186_ETC.pdf