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SHF-0186 DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET

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Description

Preliminary Preliminary Product .
Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package.

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Datasheet Specifications

Part number
SHF-0186
Manufacturer
ETC
File Size
159.39 KB
Datasheet
SHF-0186_ETC.pdf
Description
DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET

Features

* Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) S21 Gmax
* +28 dBm P1dB Typical
* +40 dBm Output IP3 Typical
* High Drain Efficiency: Up to 46% at Class AB
* 17 dB Gain at 9

Applications

* Analog and Digital Wireless System
* Cellular PCS, CDPD, Wireless Data, Pagers
* AN-020 Contains detailed application circuits Units Min. Typ. 23.4 20.1 5.0 18.0 15.2 17.9 14.6 28.0 28.8 40.9 40.4 300 175 -2.7 -1.9 -20 -20 66 -1.0 -17 -17 Max. Symbol Device Characteristic

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