SHF-0186K - DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET

Datasheet Details

Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package.

Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) Device Characteristics, T = 25ºC VDS = 8V, IDQ = 100 mA Maximum Available Gain Insertion Power Gain Gain Output 1 dB compression point Output Third Order Intercept Point Saturated Drain Current VDS = 3V, VGS = 0V Transconductance VDS = 3V, VGS = 0V Pinch-Off Voltage VDS = 3V, IDQ = 1mA Gate-to-Source Breakdown Voltage, Igs = 1.2mA Gate-to-Drain Breakdown V.

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Published: Apr 8, 2005 |