SHF-0186K Datasheet - ETC

SHF-0186K DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET

Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compr.

SHF-0186K Features

* Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) Device Characteristics, T = 25ºC VDS = 8V, IDQ = 100 mA Maximum Available Gain Insertion Power Gain Gain Output 1 dB compression point Output Third Order Inte

SHF-0186K_ETC.pdf