SHF-0186K DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET

Description

Preliminary Preliminary Product .
Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package.

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Datasheet Specifications

Part number: SHF-0186K
Manufacturer: ETC
File Size: 159.29 KB
Datasheet: SHF-0186K_ETC.pdf
Description: DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET

Features

* Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) Device Characteristics, T = 25ºC VDS = 8V, IDQ = 100 mA Maximum Available Gain Insertion Power Gain Gain Output 1 dB compression point Output Third Order Inte

Applications

* Analog and Digital Wireless System
* Cellular PCS, CDPD, Wireless Data, Pagers
* AN-020 Contains detailed application circuits Units Min. Typ. 23.4 20.1 13.7 18.0 15.2 17.9 14.6 28.0 28.8 40.9 40.4 300 175 -2.7 -1.9 -20 -20 66 -1.0 -17 -17 Max. Symbol GMAX S 21 S 21 P 1dB

SHF-0186K Distributors

📁 Related Datasheet

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📌 All Tags

SHF-0186K DC-3 GHz 0.5 Watt AlGaAs GaAs HFET ETC

ETC SHF-0186K-like datasheet

SHF-0186

SHF-0289

SHF-0589