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SHF-0189Z - GaAs HFET

This page provides the datasheet information for the SHF-0189Z, a member of the SHF-0189 GaAs HFET family.

Datasheet Summary

Description

Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package.

The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Features

  • Directive 2002/95. This package is also manufactured with green molding.
  • Now available in Lead Free, RoHS compounds that contain no antimony trioxide nor halogenated fire retarCompliant, & Green Packaging dants. Typical Gain Performance (8V,100mA) 35 30 25 20 15 10 5 0 -5 0 1 2 3 4 5 6 Frequency (GHz) 7 8 Gain, Gmax (dB) Gmax.
  • High Linearity Performance at 1.96 GHz +27 dBm P1dB +40 dBm Output IP3 +16.5 dB Gain.
  • High Drain Efficiency.
  • See App Note AN-031 for.

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Datasheet preview – SHF-0189Z

Datasheet Details

Part number SHF-0189Z
Manufacturer Sirenza Microdevices
File Size 102.80 KB
Description GaAs HFET
Datasheet download datasheet SHF-0189Z Datasheet
Additional preview pages of the SHF-0189Z datasheet.

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Full PDF Text Transcription

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Product Description Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0189 is +27 dBm when biased for Class AB operation at 8V,100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems. SHF-0189 SHF-0189Z Pb RoHS Compliant & Green Package 0.05 - 6 GHz, 0.
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