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SHF-0289 - 1.0 Watt GaAs HFET

Datasheet Summary

Description

Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package.

HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.

Features

  • Patented GaAs Heterostructure FET Technology.
  • +30dBm Output Power at 1dB Compression.
  • +46dBm Output IP3.
  • High Drain Efficiency: Up to 40% at Class AB.
  • 13 dB Gain at 900MHz (.

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Datasheet preview – SHF-0289

Datasheet Details

Part number SHF-0289
Manufacturer ETC
File Size 529.98 KB
Description 1.0 Watt GaAs HFET
Datasheet download datasheet SHF-0289 Datasheet
Additional preview pages of the SHF-0289 datasheet.

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Full PDF Text Transcription

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Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 8V and 250mA. The +46 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. They are well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers.
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