SHF-0289 1.0 Watt GaAs HFET

Description

Product .
Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package.

📥 Download Datasheet

SHF-0289 Datasheet Preview — Preview of SHF-0289 PDF

Datasheet Specifications

Part number: SHF-0289
Manufacturer: ETC
File Size: 529.98 KB
Datasheet: SHF-0289_ETC.pdf
Description: 1.0 Watt GaAs HFET

Features

* Patented GaAs Heterostructure FET Technology
* +30dBm Output Power at 1dB Compression
* +46dBm Output IP3
* High Drain Efficiency: Up to 40% at Class AB

Applications

* Analog and Digital Wireless System
* Cellular PCS, CDPD, Wireless Data, Pagers GMax(dB) 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Frequency (GHz) Electrical Specifications at Ta = 25o C Symbol Parameters: Test Conditions 2 Units Min. Typ. Max. |S21| Insertion Power Gain Vds

SHF-0289 Distributors

📁 Related Datasheet

SHF-0289Z SHF-0189 SHF-0189Z SHF1100SM SHF1101 SHF1101SM

📌 All Tags

SHF-0289 1.0 Watt GaAs HFET ETC

ETC SHF-0289-like datasheet

SHF-0186

SHF-0186K

SHF-0589