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SHF-0289 Datasheet - ETC

SHF-0289 1.0 Watt GaAs HFET

Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB.

SHF-0289 Features

* Patented GaAs Heterostructure FET Technology

* +30dBm Output Power at 1dB Compression

* +46dBm Output IP3

* High Drain Efficiency: Up to 40% at Class AB

* 13 dB Gain at 900MHz (Application circuit)

* 13 dB Gain at 1900MHz (Application circuit) Appli

SHF-0289 Datasheet (529.98 KB)

SHF-0289 Datasheet Preview — Preview of SHF-0289 PDF

Datasheet Details

Part number:

SHF-0289

Manufacturer:

ETC

File Size:

529.98 KB

Description:

1.0 watt gaas hfet.

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TAGS

SHF-0289 1.0 Watt GaAs HFET ETC

SHF-0289 Distributor