SHF-0289 Datasheet - ETC

1.0 Watt GaAs HFET

SHF-0289 Features

* Patented GaAs Heterostructure FET Technology

* +30dBm Output Power at 1dB Compression

* +46dBm Output IP3

* High Drain Efficiency: Up to 40% at Class AB

* 13 dB Gain at 900MHz (Application circuit)

* 13 dB Gain at 1900MHz (Application circuit) Appli

SHF-0289 General Description

Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB.

SHF-0289 Datasheet (529.98 KB)

SHF-0289 Datasheet Preview — Preview of SHF-0289 PDF

Datasheet Details

Part number:

SHF-0289

Manufacturer:

ETC

File Size:

529.98 KB

Description:

1.0 watt gaas hfet.

📁 Related Datasheet

SHF-0289Z GaAs HFET (Sirenza Microdevices)

SHF-0186 DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET (ETC)

SHF-0186K DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET (ETC)

SHF-0189 GaAs HFET (Sirenza Microdevices)

SHF-0189 0.5WATT GaAs HFET (RFMD)

SHF-0189Z GaAs HFET (Sirenza Microdevices)

SHF-0189Z 0.5WATT GaAs HFET (RFMD)

SHF-0589 0.05-3 GHz/ 2 Watt GaAs HFET (ETC)

SHF1100SM (SHF1100SM - SHF1103SM) HYPER FAST RECTIFIER (SSDI)

SHF1101 (SHF1101 - SHF1201) HYPER FAST RECOVERY RECTIFIER (SSDI)

TAGS

SHF-0289 1.0 Watt GaAs HFET ETC

Image Gallery

SHF-0289 Features

SHF-0289 General Description

Datasheet Details

File Size:

Description:

SHF-0289 Distributor