TC2623 Datasheet - United Monolithic Semiconductors

TC2623 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor

The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer. It is mounted in a 70mils hermetic ceramicmetal package, easy to match at X band. It is avail.

TC2623 Features

* 0.3dB minimum noise figure @ 5GHz

* 0.65dB minimum noise figure @ 12GHz

* 14dB associated gain @ 5GHz

* 10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source Main Characteristics Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise fi

TC2623-UnitedMonolithicSemiconductors.pdf