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TC2623 - 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor

TC2623 Description

TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor .
The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor.

TC2623 Features

* 0.3dB minimum noise figure @ 5GHz
* 0.65dB minimum noise figure @ 12GHz
* 14dB associated gain @ 5GHz
* 10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source Main Characteristics Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise fi

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Datasheet Details

Part number
TC2623
Manufacturer
United Monolithic Semiconductors
File Size
86.84 KB
Datasheet
TC2623-UnitedMonolithicSemiconductors.pdf
Description
12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor

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United Monolithic Semiconductors TC2623-like datasheet

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