TC2623 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor

United Monolithic Semiconductors

Description

TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor .
The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor.

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Datasheet Specifications

Part number: TC2623
Manufacturer: United Monolithic Semiconductors
File Size: 86.84 KB
Datasheet: TC2623-UnitedMonolithicSemiconductors.pdf
Description: 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor

Features

* 0.3dB minimum noise figure @ 5GHz
* 0.65dB minimum noise figure @ 12GHz
* 14dB associated gain @ 5GHz
* 10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source Main Characteristics Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise fi

TC2623 Distributors

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TC2623 12GHz Super Low Noise HEMT AlGaAs GaAs Field Effect Transistor United Monolithic Semiconductors

United Monolithic Semiconductors TC2623-like datasheet