Part number:
TC2623
Manufacturer:
United Monolithic Semiconductors
File Size:
86.84 KB
Description:
12ghz super low noise hemt / algaas/gaas field effect transistor.
The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor.
This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer.
It is mounted in a 70mils hermetic ceramicmetal package, easy to match at X band.
It is avail
TC2623 Features
* 0.3dB minimum noise figure @ 5GHz
* 0.65dB minimum noise figure @ 12GHz
* 14dB associated gain @ 5GHz
* 10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source Main Characteristics Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise fi
TC2623-UnitedMonolithicSemiconductors.pdf
Datasheet Details
TC2623
United Monolithic Semiconductors
86.84 KB
12ghz super low noise hemt / algaas/gaas field effect transistor.
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