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MA4E2037 - (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes

Description

M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes.

These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.

Features

  • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Package Outlines 1, 2 MA4E2037 0.13 5 ± .0 10 (5.3 ± .4 ) 0.21 0 ± .0 40 (8.3 ± 1.6).

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
MA4E2039 (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes
MA4E2040 (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes
MA4E2062 Silicon Schottky Diode Ring Quads
MA4E2072 Surface Mount Schottky Crossover Quads
MA4E2099-1284 High Barrier Silicon Schottky Diodes

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www.DataSheet4U.com GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040 MA4E2037, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Barrier Diodes Features • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Package Outlines 1, 2 MA4E2037 0.13 5 ± .0 10 (5.3 ± .4 ) 0.21 0 ± .0 40 (8.3 ± 1.6) Description M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.
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