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MA4E2039 - (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes

Download the MA4E2039 datasheet PDF. This datasheet also covers the MA4E2037 variant, as both devices belong to the same (ma4e2037 - ma4e2040) gaas beam lead schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.

Description

M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes.

These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.

Features

  • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Package Outlines 1, 2 MA4E2037 0.13 5 ± .0 10 (5.3 ± .4 ) 0.21 0 ± .0 40 (8.3 ± 1.6).

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Note: The manufacturer provides a single datasheet file (MA4E2037_TycoElectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040 MA4E2037, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Barrier Diodes Features • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Package Outlines 1, 2 MA4E2037 0.13 5 ± .0 10 (5.3 ± .4 ) 0.21 0 ± .0 40 (8.3 ± 1.6) Description M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.
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