Datasheet Summary
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GaAs Beam Lead Schottky Barrier Diodes
MA4E2037, MA4E2039, MA4E2040
MA4E2037, MA4E2039, MA4E2040
GaAs Beam Lead Schottky Barrier Diodes
Features
- -
- -
- Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations
Package Outlines
1, 2
MA4E2037
0.13 5 ± .0 10 (5.3 ± .4 ) 0.21 0 ± .0 40 (8.3 ± 1.6)
Description
M/A-'s MA4E2037 single, MA4E2039 antiparallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high carrier mobility of...