MA4FCP300 Datasheet | Tyco Electronics

Features n n n n n n n Low Series Resistance : 2.6 Ω Low Capacitance : 45 f F Fast Switching Speed : 40 n S Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion Rugged by Design Top View Description M/A-’s MA4FCP Series consists of Silicon Flip Chip PIN diodes fabricated with M/A-’s patented HMIC process. This diode is fabricated on epitaxial wafers using a process designed for repeatable electrical characteristics and extremely low parasitics. This diode is fully passivated with Silicon Nitride and has an additional layer of Polyimide for scratch protection. These protective coatings prevent damage to the junction during automated or manual handling. This flip chip configuration is suitable for pick and place insertion. Side View D Bottom View .. Applications The small 0315 outline and low 0.12 p S RC product, make the device useful for multi-throw switch and switched phase shifter circuits requiring < 40 n S switching speeds up to 18 GHz operating frequency. Cathode Mark Absolute Maximum Ratings @ 25 °C1 Parameter Forward Current Reverse Voltage Operating Temperature Storage Temperature Junction Temperature Dissipated Power Mounting Temperature Value 100 m A -100 V -55 °C to +150 °C -55 °C to +150 °C +175 °C 150 m W +300 °C for 10 seconds Nominal Die Dimensions Inches Millimeters Dim A B C D E F Min 0.0269 0.0135 0.0040 0.0041 0.0124 0.0069 Max 0.0289 0.0155 0.0080 0.0061 0.0144 0.0089 Min 0.683 0.343 0.102 0.105 0.315 0.175 Max 0.733 0.393 0.203 0.155 0.365 0.225 1. Exceeding any of these values may result in permanent damage Silicon Flip Chip PIN Diode Electrical Specifications @ TA = + 25 °C Parameters @ Conditions Total Capacitance @ -10 V, 1 MHz1 Total Capacitance @ -10 V, 1 GHz1,3 Series Resistance @ +50 m A2,3 , 100 MHz Series Resistance @ +50 m A2,3 , 1 GHz Forward Voltage @ +100 m A Reverse Voltage @ -10 µ A Reverse Current @ -70 V 50 - 90% Lifetime @ +10 m A / -6 m A Steady State...