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PH1819-45 - Wireless Bipolar Power Transistor

Features

  • NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System -(22.95) PHl819-45 900 Vl . oo .175=.315 (4.455.3a) Absblute Maximum Ratings at 25°C Parameter Symbol VCES VCES VEBO Ic PO TJ T ST0 8JC Rating 25 65 3.0 5.5 loo 200 -65 to ~200 1.3 Units V V V A w “C “c J! .157r. o10 r(4.24t.251 .003L. rlOl (.08=.03)1 www. DataSheet4U. com Collector-Emitter Voltage Collector-EmitterVoltage Emit.

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Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz Features NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System -(22.95) PHl819-45 900 Vl .oo .175=.315 (4.455.3a) Absblute Maximum Ratings at 25°C Parameter Symbol VCES VCES VEBO Ic PO TJ T ST0 8JC Rating 25 65 3.0 5.5 loo 200 -65 to ~200 1.3 Units V V V A w “C “c J! .157r.o10 r(4.24t.251 .003L.rlOl (.08=.03)1 www.DataSheet4U.com Collector-Emitter Voltage Collector-EmitterVoltage Emitter-Base Voltage CollectorCurrent Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance “CPA UNLCSS GTHCRWISE NOTED. TOLERANCCS ARE IK-JES cMILLIYETrRS 2.
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