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QM6008G - N-Ch 60V Fast Switching MOSFETs

Description

The QM6008G is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Product Summery BVDSS 60V RDSON 100mΩ ID 2.8A.

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Datasheet Details

Part number QM6008G
Manufacturer UBIQ
File Size 328.63 KB
Description N-Ch 60V Fast Switching MOSFETs
Datasheet download datasheet QM6008G Datasheet
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QM6008G N-Ch 60V Fast Switching MOSFETs General Description The QM6008G is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM6008G meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Product Summery BVDSS 60V RDSON 100mΩ ID 2.
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