P0903BDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
VDS =20V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
25
1
1.6 3
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS =5V, ID =20A
VGS =10V, ID =25A
12 19
mΩ
7 9.5
Forward Transconductance1
gfs
VDS =15V, ID =20A
60 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 15V, f = 1MHz
1400
300
190
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS = 10V
VGS = 4.5V
Qgs
VDS =0.5V(BR)DSS,
ID = 25A
25
11
nC
6
Gate-Drain Charge2
Qgd
5
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
td(on)
tr
td(off)
VDS = 15V ,RL=15Ω
ID≌1A, VGS = 10V, RGEN =6Ω
16
25
60
nS
Fall Time2
tf
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
37 A
Forward Voltage1
VSD IF =IS, VGS = 0V
1.3 V
Reverse Recovery Time
trr IF =25A, dlF/dt = 100A /mS
35 nS
Reverse Recovery Charge
Qrr
61 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
REV 1.0 2 2014/5/7
