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P1210BVA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
12mΩ @VGS = 10V
ID 8.7A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
8.7 6.9 32
Avalanche Current
IAS 15
Avalanche Energy
L = 1mH EAS 112
Power Dissipation
TA= 25 °C TA =70 °C
PD
2 1.3
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
62
Junction-to-Case
RqJC
25
1Pulse width limited by maximum junction temperature.
P1210BVA Datasheet
