Click to expand full text
P3004ND5G
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 30mΩ @VGS = 10V
-40V
55mΩ @VGS = -10V
ID 12A -8.8A
Channel N P
TO-252- 5
100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
UNITS
Drain-Source Voltage Gate-Source Voltage
N 40 VDS P -40
N ±20 VGS P ±20
V
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 70 °C
N 12 P -8.8 ID N 8 P -5.8 N 50 IDM P -50
A
Avalanche Current
N 19 IAS P -18
Avalanche Energy
L = 0.1mH
N 20 EAS P 19
mJ
Power Dissipation
TC = 25 °C TC = 70 °C
N3 P3 PD N 2.1 P 2.1
W
Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG TL
-55 to 150 275
°C
Ver 1.
P3004ND5G Datasheet
