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P8008BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
80V
80mΩ @VGS = 10V
15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
80
Gate-Source Voltage
VGS
±25
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current1
TC = 25 °C
ID
15
TC = 100 °C
10
IDM
60
IAS,IAR
23
Avalanche Energy Repetitive Avalanche Energy1
L=0.1mH
EAS
27
EAR
See Figure5,6
Power Dissipation
TC = 25 °C
PD
39
TC = 100 °C
15
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P8008BD Datasheet
