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P8010BT - N-Channel MOSFET

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Part number P8010BT
Manufacturer UNIKC
File Size 714.06 KB
Description N-Channel MOSFET
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P8010BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 85mΩ @VGS = 10V 17A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 17 10 IDM 35 Avalanche Current Avalanche Energy2 IAS 13 EAS 8.5 Power Dissipation TC = 25 °C TC = 100 °C PD 54 21 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Starting Tj = 25 °C,L=0.1mH,VDD= 50V SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.3 °C / W 62.
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