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P8010BV - N-Channel MOSFET

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Part number P8010BV
Manufacturer UNIKC
File Size 398.24 KB
Description N-Channel MOSFET
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P8010BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 3.5 2.8 20 Avalanche Current IAS 12 Avalanche Energy L =0.1mH EAS 7.2 Power Dissipation TA = 25 °C TA = 70 °C PD 2.4 1.5 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RqJC 25 Junction-to-Ambient2 RqJA 52 1Pulse width limited by maximum junction temperature.
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