| Description | P9006EI P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ @VGS = -10V ID -18A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM -18 -11 -50 Avalanche Current IAS -24 Avalanche Energy L = ... |
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| Datasheet |
 P9006EI Datasheet - 337.78KB |
