P9006EDG - P-Channel MOSFET

VBsemi

Key Features

TrenchFET® Power MOSFET.
100 % UIS Tested.

P9006EDG p-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	P9006EDG
Manufacturer	VBsemi
File Size	280.26 KB
Description	P-Channel MOSFET
Datasheet	P9006EDG Datasheet

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Full PDF Text Transcription (Reference)

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P9006EDG www.VBsemi.com P9006EDG P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID (A) - 30 - 25 Qg (Typ) 10 FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID - 30 - 25 Pulsed Drain Current IDM - 30 A Continuing Source Current (Diode Conduction) IS - 20 Avalanche Current IAS - 20 Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH EAS 7.