P9006EDG Description
P9006EDG P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID (A) - 30 - 25 Qg (Typ).
P9006EDG Key Features
- TrenchFET® Power MOSFET
- 100 % UIS Tested
- Part: P9006EDG
- Manufacturer: VBsemi
- Size: 280.26 KB
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