P9006EDG Overview
P9006EDG P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID (A) - 30 - 25 Qg (Typ).
P9006EDG Key Features
- TrenchFET® Power MOSFET
- 100 % UIS Tested
P9006EDG datasheet by VBsemi.
| Part number | P9006EDG |
|---|---|
| Datasheet | P9006EDG-VBsemi.pdf |
| File Size | 280.26 KB |
| Manufacturer | VBsemi |
| Description | P-Channel MOSFET |
|
|
|
P9006EDG P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID (A) - 30 - 25 Qg (Typ).
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
![]() |
P9006EDG | P-Channel MOSFET | UNIKC |
![]() |
P9006EDG | P-Channel Logic Level Enhancement | Niko-Sem |
![]() |
P9006EDA | P-Channel Enhancement Mode Field Effect Transistor | NIKO-SEM |
![]() |
P9006EI | P-Channel MOSFET | UNIKC |
![]() |
P9006EL | MOSFET | UNIKC |
| Part Number | Description |
|---|