P9006EDG Description
SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 75 UNITS °C / W Ver 1.1 1 2013-3-26 P9006EDG P-Channel Enhancement Mode MOSFET (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source.
P9006EDG is P-Channel MOSFET manufactured by UNIKC.
| Manufacturer | Part Number | Description |
|---|---|---|
NIKO-SEM |
P9006EDG | P-Channel Logic Level Enhancement |
VBsemi |
P9006EDG | P-Channel MOSFET |
NIKO-SEM |
P9006EDA | P-Channel Enhancement Mode Field Effect Transistor |
NIKO-SEM |
P9006EVA | P-Channel Enhancement Mode Field Effect Transistor |
SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 75 UNITS °C / W Ver 1.1 1 2013-3-26 P9006EDG P-Channel Enhancement Mode MOSFET (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source.