P9006EDA - P-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the P9006EDA datasheet PDF. This datasheet also covers the P9006EDA-NIKO variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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P9006EDA p-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P9006EDA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P9006EDA
Manufacturer	NIKO-SEM
File Size	210.83 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	P9006EDA Datasheet

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Other Datasheets by NIKO-SEM

Part Number	Description
P9006EDG	P-Channel Logic Level Enhancement
P9006EVA	P-Channel Enhancement Mode Field Effect Transistor
P9008HV	Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM P-Channel Enhancement Mode P9006EDA Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ ID -13A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS -60 ±25 -13 -8.3 -37 -17.2 14.7 31.2 12.