P9006EVA Overview
2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value.
P9006EVA datasheet by NIKO-SEM.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | P9006EVA |
|---|---|
| Datasheet | P9006EVA P9006EVA-NIKO Datasheet (PDF) |
| File Size | 416.96 KB |
| Manufacturer | NIKO-SEM |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
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2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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P9006EVG | P-Channel MOSFET | UNIKC |
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P9006EDG | P-Channel MOSFET | UNIKC |
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P9006EDG | P-Channel MOSFET | VBsemi |
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P9006EI | P-Channel MOSFET | UNIKC |
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P9006EL | MOSFET | UNIKC |
| Part Number | Description |
|---|---|
| P9006EDA | P-Channel Enhancement Mode Field Effect Transistor |
| P9006EDG | P-Channel Logic Level Enhancement |
| P9008HV | Dual N-Channel MOSFET |