P9006EVA Description
2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value.
P9006EVA is P-Channel Enhancement Mode Field Effect Transistor manufactured by NIKO-SEM.
| Manufacturer | Part Number | Description |
|---|---|---|
UNIKC |
P9006EVG | P-Channel MOSFET |
UNIKC |
P9006EDG | P-Channel MOSFET |
VBsemi |
P9006EDG | P-Channel MOSFET |
UNIKC |
P9006EI | P-Channel MOSFET |
UNIKC |
P9006EL | MOSFET |
2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value.