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P9006EVA - P-Channel Enhancement Mode Field Effect Transistor

Download the P9006EVA datasheet PDF. This datasheet also covers the P9006EVA-NIKO variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P9006EVA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P9006EVA
Manufacturer NIKO-SEM
File Size 416.96 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet P9006EVA Datasheet

📁 Similar Datasheet

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Other Datasheets by NIKO-SEM

Part Number Description
P9006EDA P-Channel Enhancement Mode Field Effect Transistor
P9006EDG P-Channel Logic Level Enhancement
P9008HV Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM P-Channel Logic Level Enhancement Mode P9006EVA Field Effect Transistor SOP-8 Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90mΩ -3.6A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation3 Junction & Storage Temperature Range TA = 25 °C TA = 70 °C L = 0.1mH TA = 25 °C TA = 70 °C VDS VGS ID IDM IAS EAS PD Tj, Tstg G : GATE D : DRAIN S : SOURCE 100% UIS Tested 100% Rg Tested LIMITS -60 ±25 -3.6 -2.9 -20 -17.2 14.7 2.4 1.