P9006EI is P-Channel MOSFET manufactured by UNIKC.
| Manufacturer | Part Number | Description |
|---|---|---|
NIKO-SEM |
P9006EDA | P-Channel Enhancement Mode Field Effect Transistor |
NIKO-SEM |
P9006EDG | P-Channel Logic Level Enhancement |
VBsemi |
P9006EDG | P-Channel MOSFET |
|
NIKO-SEM |
P9006EVA | P-Channel Enhancement Mode Field Effect Transistor |
SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.45 50 UNITS °C / W Ver 1.0 1 2012/4/12 P9006EI P-Channel Enhancement Mode MOSFET (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdo.
