P9006ESG is P-Channel MOSFET manufactured by UNIKC.
| Manufacturer | Part Number | Description |
|---|---|---|
NIKO-SEM |
P9006EDA | P-Channel Enhancement Mode Field Effect Transistor |
NIKO-SEM |
P9006EDG | P-Channel Logic Level Enhancement |
VBsemi |
P9006EDG | P-Channel MOSFET |
|
NIKO-SEM |
P9006EVA | P-Channel Enhancement Mode Field Effect Transistor |
SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.3 °C / W Ver 1.0 1 2012/11/22 P9006ESG P-Channel Enhancement Mode MOSFET (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Bo.
