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P9006ESG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = 10V
ID -18A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
-18 -12 -48
Avalanche Current
IAS -22
Avalanche Energy
L = 0.1mH
EAS
24
Power Dissipation
TC = 25 °C TC = 100 °C
PD
54 22
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case 1limited by maximum junction temperature.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 2.3 °C / W
Ver 1.
P9006ESG Datasheet
