| Part Number | P9006EDG Datasheet |
|---|---|
| Manufacturer | Niko-Sem |
| Overview | NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) P9006EDG TO-252 Lead-Free D PRODUCT SUMMARY V(BR)DSS -60V RDS(ON) 90m ID -8A G S 1. GATE 2. DRAIN 3. SOURCE . e Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -48V, VGS = 0V VDS = -44V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V -32 -60 -1 -2 -3 ±250 nA. |
P9006EDG Datasheet and Specifications PDF
The P9006EDG is a P-Channel Logic Level Enhancement.
| Part Number | P9006EDG Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
P9006EDG
P9006EDG P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60
0.061 at V GS = - 10 V
0.072 at VGS = - 4.5 V
ID (A) - 30 - 25
Qg (Typ) 10
FEATURES • Tr.
* TrenchFET® Power MOSFET * 100 % UIS Tested APPLICATIONS * Load Switch TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C T. |
| Part Number | P9006EDG Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | UNIKC |
| Overview | P9006EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ @VGS = -10V ID -15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST C. . |