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PB544DU
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 13.5mΩ @VGS = 10V
ID 10A
PDFN 2X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70°C
ID IDM
10 8.2 40
Avalanche Current
IAS 17
Avalanche Energy3
EAS 14.4
Power Dissipation
TA= 25 °C TA= 70 °C
PD
2.3 1.4
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
54
1Pulse width limited by maximum junction temperature.
PB544DU Datasheet
