Datasheet4U Logo Datasheet4U.com

PB5G2JU - Dual N-Channel MOSFET

📥 Download Datasheet

Datasheet preview – PB5G2JU

Datasheet Details

Part number PB5G2JU
Manufacturer UNIKC
File Size 762.39 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet PB5G2JU Datasheet
Additional preview pages of the PB5G2JU datasheet.

📁 Similar Datasheet

  • PB5G8JW - Dual N-Channel Enhancement Mode Field Effect Transistor (NIKO-SEM)
  • PB50 - POWER BOOSTER AMPLIFIER (ETC)
  • PB50005 - Bridge Rectifier (Yangzhou Yangjie)
  • PB5001 - Bridge Rectifier (Yangzhou Yangjie)
  • PB5002 - Bridge Rectifier (Yangzhou Yangjie)
  • PB5004 - Bridge Rectifier (Yangzhou Yangjie)
  • PB5006 - Bridge Rectifiers (Vishay)
  • PB5006 - Bridge Rectifier (Yangzhou Yangjie)
  • PB5006L - Low VF Bridge Rectifier (Yangzhou Yangjie)
  • PB5008 - Bridge Rectifiers (Vishay)
Other Datasheets by UNIKC

Full PDF Text Transcription

Click to expand full text
PB5G2JU Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 9.5mΩ @VGS = 4.5V 12A TDFN 2X3-6 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID 12 9.4 IDM 42 Avalanche Current IAS 23 Avalanche Energy3 EAS 26 Power Dissipation TA= 25 °C TA= 70°C PD 2.4 1.5 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 52 1Pulse width limited by maximum junction temperature.
Published: |