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PB600BA Datasheet Preview

PB600BA Datasheet

N-Channel Enhancement Mode MOSFET

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PB600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID
9A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
9
7.2
27
Avalanche Current
IAS 12.6
Avalanche Energy
L = 0.1 mH
EAS
7.9
Power Dissipation
TA= 25 °C
TA= 70°C
PD
1.7
1.1
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe.
MAXIMUM
71.7
UNITS
°C / W
REV 1.0
1 2014-3-12




UNIKC

PB600BA Datasheet Preview

PB600BA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PB600BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 55°C
30
1.3 1.7 2.5
V
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 9A
VGS =10V, ID = 9A
VDS =10V, ID = 9A
11 17.5
9 12
45 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 15V , ID = 9A
VDD = 15V
ID @ 9A, VGEN = 10V, RG = 6Ω
706
103 pF
74
3.1 Ω
15
8
nC
2.6
3.6
13
37
nS
48
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
1.5 A
Forward Voltage1
VSD IF = 9A, VGS = 0V
1.1 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 9A, dlF/dt = 100A / μS
11 nS
3 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2014-3-12


Part Number PB600BA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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