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PD504BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
85mΩ @VGS = 10V
ID 15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 110
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
15 9 35
Avalanche Current
IAS 11
Avalanche Energy
L = 1mH
EAS
60
Peak Diode Recovery dV/dt2
dV/dt
4.1
Power Dissipation
TC = 25 °C TC = 100 °C
PD
46 18
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ V/nS
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
PD504BA Datasheet
