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PD563BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
15mΩ @VGS = -10V
ID -46A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±25
Continuous Drain Current3 Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
-46 -29 -130
Avalanche Current
IAS -34
Avalanche Energy
L = 0.1mH
EAS
57.8
Power Dissipation
TC= 25 °C TC= 100°C
PD
62.5 25
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is -39A.
SYMBOL RqJC RqJA
TYPICA L
MAXIMUM 2
62.
PD563BA Datasheet
