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PD5E8BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 45mΩ @VGS = 10V
ID 16A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
16 10 35
Avalanche Current
IAS 10
Avalanche Energy
L = 0.1mH
EAS
5
Power Dissipation
TC = 25 °C TC = 100 °C
PD
20 8
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA RqJC
TYPICAL
MAXIMUM UNITS 62.5 °C / W 6
REV 1.
PD5E8BA Datasheet
