900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UNIKC

PE548EA Datasheet Preview

PE548EA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PE548EA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.4mΩ @VGS = 10V
ID3
58A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
58
Continuous Drain Current3
Tc = 100 °C
TA = 25 °C
ID
37
16
Pulsed Drain Current1
TA= 70 °C
IDM
13
160
Avalanche Current
IAS 40
Avalanche Energy
L =0.1mH
EAS
80
TC = 25 °C
25
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
10
2
TA = 70 °C
1.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
Junction-to-Case
RqJC
5
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 23A.
UNITS
°C / W
REV 1.0
1 2014-2-28




UNIKC

PE548EA Datasheet Preview

PE548EA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PE548EA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
30
VDS = VGS, ID = 250mA
1 1.6 3
VDS = 0V, VGS = ±16V
±30
VDS = 24V, VGS = 0V
1
VDS = 20V, VGS = 0V, TJ = 55 °C
10
VGS = 4.5V, ID = 16A
4.3 5.8
VGS = 10V , ID = 16A
3.6 4.4
VDS = 10V, ID = 16A
60
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 15V, f = 1MHz
2280
350
297
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 15V , ID = 16A
56.6
29.9
7.1
Gate-Drain Charge2
Qgd
15.7
Turn-On Delay Time2
td(on)
28
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD= 15V,
ID @ 16A, VGEN = 10V, RG= 6Ω
17
60
Fall Time2
tf
15
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 16A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 16A, dlF/dt = 100A / μS
20
10
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 23A.
58
1
UNITS
V
mA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014-2-28


Part Number PE548EA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
PDF Download

PE548EA Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 PE548EA N-Channel Enhancement Mode MOSFET
UNIKC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy