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PZ2503HV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 25mΩ @VGS = 10V
ID 6.2A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±16
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
6.2 5 31
Avalanche Current
IAS 17
Avalanche Energy
L = 0.1mH
EAS
18
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1.5 1
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient Junction-to-Lead 1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA RqJL
TYPICAL
MAXIMUM
80 25
UNITS
°C / W °C / W
Ver 1.
PZ2503HV Datasheet
