* RDS(ON) < 1.0 Ω @ VGS = 10 V, ID = 5.0 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL Power MOSFET .

of switching power supplies and adaptors.
* FEATURES * RDS(ON) < 1.0 Ω @ VGS = 10 V, ID = 5.0 A * Fast switching cap.

The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high spee.

10N60K-MT

10N60K

10N60

10N60-HC

10N60-TC

10N60A

10N60B

10N60C

10N60F

10N60H

10N60M2

10N60NZ

10N60Z