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10N60K-MT - N-CHANNEL POWER MOSFET

General Description

The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 0.75Ω @ VGS =10V, ID = 5.0A.
  • Low Crss ( typical 7 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-220F3 1 TO-262 1 TO-263.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 10N60K-MT Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 0.75Ω @ VGS =10V, ID = 5.