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10N60Z - 10A 600V N-CHANNEL POWER MOSFET

General Description

The UT C 10N 60Z is a hi gh voltage an d hi gh curre nt po wer MOSFET, designe d to have better c haracteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • ES.
  • RDS(ON) = 0.75Ω@VGS =10V.
  • Low gate charge ( typical 44nC).
  • Low CRSS ( typical 18 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 10N60Z 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The UT C 10N 60Z is a hi gh voltage an d hi gh curre nt po wer MOSFET, designe d to have better c haracteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This po wer MOSFET is usually use d at high s peed s witching a pplications in po wer supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) = 0.