10N60
Key Features
- 10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A
- Low gate charge
- Low Ciss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: 10N60
- Description: N-CHANNEL MOSFET
- Category: MOSFET
- Manufacturer: CHONGQING PINGYANG
- Size: 186.56 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 10N60Z-Q | Unisonic Technologies | N-CHANNEL POWER MOSFET |
| 10N60-TC | Unisonic Technologies | N-CHANNEL MOSFET |
| 10N60K-MTQ | Unisonic Technologies | N-CHANNEL POWER MOSFET |
| 10N60-HC | Unisonic Technologies | N-CHANNEL MOSFET |
| JVR-10N621K | RFE | METAL OXIDE VARISTOR |
| JVR-10N680K | RFE | METAL OXIDE VARISTOR |
| 10N65K-MT | Unisonic Technologies | N-CHANNEL POWER MOSFET |
| 10N65 | JINAN JINGHENG | 650V N Channel Power MOSFET |
| 10N65F | tokmas | GaN Enhancement-mode Power Transistor |
| 10N65F | EVVO | 650V N-Channel Enhancement Mode MOSFET |