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10N60 - N-CHANNEL POWER MOSFET

General Description

The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • ES.
  • Pb-free plating product number: 10N60L.
  • 10A, 600V, RDS(ON) =0.73Ω@VGS =10V.
  • Low gate charge ( typical 44 nC).
  • Low Crss ( typical 18 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL 2.Drain 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 10N60 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. „ FEATURES *Pb-free plating product number: 10N60L * 10A, 600V, RDS(ON) =0.73Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability „ SYMBOL 2.Drain 1.Gate 3.