900v n-channel super-junction mosfet.
* RDS(ON) ≤ 1.0 Ω @ VGS=10V, ID=5.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL
Power MOSFET
* .
* FEATURES
* RDS(ON) ≤ 1.0 Ω @ VGS=10V, ID=5.0A * Fast switching capability * Avalanche energy tested * Improved dv.
The UTC 10NM90 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used a.
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