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12N60 - N-CHANNEL MOSFET

Description

The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology.

These devices are suited for high efficiency switch mode power supply.

Features

  • Pb-free plating product number:12N60L.
  • RDS(ON) = 0.7Ω @VGS = 10 V.
  • Ultra low gate charge ( typical 42 nC ).
  • Low reverse transfer capacitance ( CRSS = typical 25 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain 1.Gate 3.Source.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (12N60_UTC.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 12N60 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ www.DataSheet4U.com Power MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. „ FEATURES *Pb-free plating product number:12N60L * RDS(ON) = 0.
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