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12N90-C - N-CHANNEL MOSFET

General Description

planar stripe and DMOS technology.

minimum on-state resistance and superior switching performance.

Key Features

  • RDS(ON) ≤ 1.2 Ω @ VGS=10V, ID=6.0A.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL Power MOSFET TO-220F2 TO-3PN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 12N90-C 12A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION 1 The UTC 12N90-C is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is usually used at high speed switching 1 applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 1.2 Ω @ VGS=10V, ID=6.