1N60P - 600V 1.2A N-CHANNEL POWER MOSFET

Description

The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic.

Features

S.
RDS(ON) =11.5Ω@VGS = 10V.
Ultra Low gate charge (typical 5.0nC).
Low reverse transfer capacitance (CRSS = typical 3.0 pF).
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness.
SYMBOL Power MOSFET.

UTC

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1N60P 600V 1.2A N-CHANNEL POWER MOSFET by UTC - Datasheet Preview — Datasheet preview – 1N60P

Datasheet Details

Part number	1N60P
Manufacturer	UTC
File Size	305.48 KB
Description	600V 1.2A N-CHANNEL POWER MOSFET
Datasheet	1N60P Datasheet
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1N60 - 1.2A 600V N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD 1N60P 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.

Published: Dec 31, 2017 |