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1N60P Datasheet Preview

1N60P Datasheet

600V N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
1N60P
1.2A, 600V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 1N60P is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high rugged
avalanche characteristic. This power MOSFET is usually used at
high speed switching applications of power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
„ FEATURES
* RDS(ON) =11.5@VGS = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
1N60PL-T92-B
1N60PG-T92-B
TO-92
1N60PL-T92-K
1N60PG-T92-K
TO-92
1N60PL-T92-R
1N60PG-T92-R
TO-92
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
Packing
Tape Box
Bulk
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-634.A




UTC

1N60P Datasheet Preview

1N60P Datasheet

600V N-CHANNEL POWER MOSFET

No Preview Available !

1N60P
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 600 V
Gate-Source Voltage
Avalanche Current (Note 2)
VGSS ±30 V
IAR 1.2 A
Continuous Drain Current
Pulsed Drain Current (Note 2)
ID 1.2 A
IDM 4.8 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
50 mJ
4.0 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation (TA=25)
PD 1 W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 1.2A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θJA
RATINGS
140
UNIT
/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-634.A


Part Number 1N60P
Description 600V N-CHANNEL POWER MOSFET
Maker UTC
Total Page 6 Pages
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