23N50E mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 245 mΩ @ VGS=10V, ID=11.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability
* SYMBOL
2.Drain
Power MOSFET
1.Gate
3..
motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
* FEATURES
* RDS(ON) ≤ 245 mΩ.
The 23N50E uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers a.
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