23N50E Description
0.40 50.0 Unit °C/W °C/W Note 1 : Stating Tch=25°C, IAS =10A, L=14.1mH, Vcc=50V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph.
23N50E is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
23N50E | N-CHANNEL POWER MOSFET |
Inchange Semiconductor |
23N50 | N-Channel MOSFET |
0.40 50.0 Unit °C/W °C/W Note 1 : Stating Tch=25°C, IAS =10A, L=14.1mH, Vcc=50V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph.