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23N50E - N-CHANNEL POWER MOSFET

General Description

The 23N50E uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Key Features

  • S.
  • RDS(ON) ≤ 245 mΩ @ VGS=10V, ID=11.5A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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UNISONIC TECHNOLOGIES CO., LTD 23N50E Preliminary 23A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The 23N50E uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.  FEATURES * RDS(ON) ≤ 245 mΩ @ VGS=10V, ID=11.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability  SYMBOL 2.Drain Power MOSFET 1.Gate 3.