Download 23N50E Datasheet PDF
Unisonic Technologies
23N50E
23N50E is N-CHANNEL POWER MOSFET manufactured by Unisonic Technologies.
DESCRIPTION The 23N50E uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. - FEATURES - RDS(ON) ≤ 245 mΩ @ VGS=10V, ID=11.5A - Fast switching capability - Avalanche energy specified - Improved dv/dt capability - SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source - ORDERING INFORMATION Ordering Number Lead Free Halogen Free 23N50EL-T47-T 23N50EG-T47-T 23N50EL-T3P-T 23N50EG-T3P-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-247 TO-3P Pin Assignment Packing Tube Tube - MARKING .unisonic..tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-A35.d Preliminary Power MOSFET - ABSOLUTE MAXIMUM RATINGS PARAMETER...