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23N50E - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The 23N50E uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Features

  • S.
  • RDS(ON) ≤ 245 mΩ @ VGS=10V, ID=11.5A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Datasheet Details

Part number 23N50E
Manufacturer UTC
File Size 181.53 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 23N50E Datasheet
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    UNISONIC TECHNOLOGIES CO., LTD 23N50E Preliminary 23A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The 23N50E uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.  FEATURES * RDS(ON) ≤ 245 mΩ @ VGS=10V, ID=11.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
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