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23N50 Datasheet

Manufacturer: Inchange Semiconductor
23N50 datasheet preview

Datasheet Details

Part number 23N50
Datasheet 23N50-INCHANGE.pdf
File Size 296.53 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
23N50 page 2

23N50 Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 23 A IDM Drain Current-Single Pluse 92 A PD Total Dissipation @TC=25℃ 315 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

23N50 Key Features

  • Drain Current -ID= 23A@ TC=25℃ -Drain Source Voltage

23N50E from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Fuji Electric Logo 23N50E N-CHANNEL SILICON POWER MOSFET Fuji Electric
UTC Logo 23N50E N-CHANNEL POWER MOSFET UTC
Inchange Semiconductor logo - Manufacturer

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