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2N6099 - COMPLEMENTARY SILICON TRANSISTORS

Features

  • High safe operating area(100 tested) 150W and 100V.
  • Complement Characterized for linear operation.
  • High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A).
  • For Low Distortion Complementary Designs TO-3.

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Datasheet Details

Part number 2N6099
Manufacturer UTC
File Size 95.16 KB
Description COMPLEMENTARY SILICON TRANSISTORS
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Full PDF Text Transcription

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UTC 2N3773/2N6099 COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers, DC to DC converters or inverts. P O W E R TRANSISTOR FEATURES *High safe operating area(100 tested) 150W and 100V *Complement Characterized for linear operation *High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.
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