Datasheet4U Logo Datasheet4U.com

2SA1300 - PNP EPITAXIAL SILICON TRANSISTOR

Description

Strobo Flash Applications.

Medium Power Amplifier Applications.

Features

  • High DC Current Gain and Excellent hFE Linearity.
  • hFE(1)=140-600, (VCE= -1V,IC= -0.5A).
  • hFE(2)=60(Min. ),120(Typ. ),(VCE= -1V,IC= -4A).
  • Low Saturation Voltage.
  • VCE (sat)= -0.5V(Max. ), (IC= -2A,IE= -50mA) 1 SOT-89 1: Emitter 2: Collector 3:Base.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1300 TRANSISTOR Toshiba Semiconductor
2SA1300 Plastic-Encapsulated Transistors TRANSYS
2SA1300 PNP Transistor Dc Components
2SA1300 PNP Transistor SeCoS
2SA1300 PNP Silicon Epitaxial Planar Transistor BLUECOLOUR

Other Datasheets by Unisonic Technologies

Part Number Description
2SA1012 PNP SILICON TRANSISTOR
2SA1013 PNP Transistor
2SA1015 PNP SILICON TRANSISTOR
2SA1201 SILICON PNP EPITAXIAL TRANSISTOR
2SA1507 SWITCHING TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) *Low Saturation Voltage *VCE (sat)= -0.5V(Max.), (IC= -2A,IE= -50mA) 1 SOT-89 1: Emitter 2: Collector 3:Base ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulsed (Note) www.DataSheet4U.
Published: |