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2SB1386 - LOW FREQUENCY PNP TRANSISTOR

Key Features

  • S.
  • Excellent DC current gain characteristics.
  • Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A).

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Full PDF Text Transcription for 2SB1386 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SB1386. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR  FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)=...

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S * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)  ORDERING INFORMATION Order Number 2SB1386G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 Pin Assignment 123 BCE Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-019.

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