2SB1386 Overview
VCE(sat) = 0.35V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) plements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units:.
2SB1386 Details
| Part number | 2SB1386 |
|---|---|
| Datasheet | 2SB1386 Datasheet PDF (Download) |
| File Size | 155.14 KB |
| Manufacturer | ROHM |
| Description | Low Frequency Transistor |
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